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the saturation region model for the bjt shown figu

The saturation region model for the bjt shown figure

372 + iB

C H A P T E R

S E V E N t h e m o s f e t
C
B
iC
vCE

can be significantly simplified by using simple piecewise-linear models for the diodes.

vBE

iE
-

with a voltage source (from Figure 4.33a). In the model in Figure 7.49c, the dependent

(a)

B iB iB C

OFF state model cutoff: when the base current iB is zero, both the diodes are OFF, and

so is the current source. Figure 7.50a depicts the corresponding BJT model in the cutoff

iB = iB
(b)
vCE > vBE − 0.4 V (7.48)

the emitter diode is ON and the collector diode is OFF, and the active region results. In this region of operation, as illustrated in the active region BJT model in Figure 7.50b,

B +

iB

+
iC The 0.6-V source models the corresponding 0.6-V diode drop. Observe further that
iB = iB
βiB

in the active region because the base-to-collector diode is off. In the active region, BJTs

vBE -

+ 0.6 V-

The condition vCE > vBE − 0.4 V ensures that the base-collector diode stays OFF. The condition states that the collector voltage must not fall below the base voltage by more

iE
-
(c)

E

is equivalent to the simpler constraints

vCE > vBE − 0.4 V.

vBC < 0.4 V or

factor β, so that the collector current becomes

iC = βiB

C H A P T E R

S E V E N

373
0.4 V C
+ -
B iB
vCE
+
vBE -

iE

-

iC =
(7.49)
βiB 0.4 V C +
+ -

The base-to-collector diode in Figure 7.49c helps model the onset of saturation. Speci-fically, saturation results when the both the base-to-collector and the base-to-emitter diodes are ON. When iB > 0, and the condition implied by Equation 7.48 is violated, that is, if

vCE = vBE − 0.4 V

B iB iB βiB
vBE -

iE

-

vBC = 0.4 V or
C

iC

+

forward-biased diodes). Because of their low resistance, the path currents are determined B
iB - + vCE
by external circuit constraints. By summing voltages along the path E, B, C, we see that +
vBE
Our model is not yet complete. There is one additional state in which the emitter

-
iE

diode is OFF and the collector diode is ON, as can happen when the base-to-collector -
E

(c) Saturation region

transistor models in various regions of operation.

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