The saturation region model for the bjt shown figure
372 | + | iB |
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S E V E N | t h e | m o s f e t | ||
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C | ||||||||
B | ||||||||
iC | ||||||||
vCE | ||||||||
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iE | |||||||
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B | iB | iB′ | C | ||
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iB = iB′ |
(b) | vCE > vBE − 0.4 V | (7.48) |
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the emitter diode is ON and the collector diode is OFF, and the active region results. In this region of operation, as illustrated in the active region BJT model in Figure 7.50b,
B | + |
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iC | The 0.6-V source models the corresponding 0.6-V diode drop. Observe further that | |||||
iB = iB′ | ||||||
βiB′ | ||||||
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vBE | - |
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iE | ||||||
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(c) |
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vBC < 0.4 V | or |
iC = βiB |
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373 | |||||||||||||
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0.4 V | C | |||||||||||||||
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B | iB | vCE | ||||||||||||||
+ | ||||||||||||||||
vBE | - |
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iC = | (7.49) | |||||||||||||||
�βiB | 0.4 V | C | + | |||||||||||||
+ - | ||||||||||||||||
vCE = vBE − 0.4 V |
B | iB | iB′ | βiB′ | ||||||||||||
vBE | - |
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vBC = 0.4 V | or | |||||||||||||||
C |
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forward-biased diodes). Because of their low resistance, the path currents are determined | B | iB′ | - | + | vCE | |
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by external circuit constraints. By summing voltages along the path E, B, C, we see that | + | |||||
vBE | ||||||
Our model is not yet complete. There is one additional state in which the emitter |
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diode is OFF and the collector diode is ON, as can happen when the base-to-collector | - | |||||
E |
(c) Saturation region
transistor models in various regions of operation.